Silicon-Germanium Heterojunction Bipolar Transistors | 
enlarge | Authors: John D. Cressler, Guofu Niu Publisher: Artech House Publishers Category: Book
List Price: $139.00 Buy New: $124.56 You Save: $14.44 (10%)
New (6) from $124.56
Avg. Customer Rating: 1 reviews Sales Rank: 1118093
Media: Hardcover Number Of Items: 1 Pages: 589 Shipping Weight (lbs): 2.3 Dimensions (in): 9.2 x 6.2 x 1.6
ISBN: 1580533612 Dewey Decimal Number: 621.381528 EAN: 9781580533614 ASIN: 1580533612
Publication Date: January 2003 Shipping: Eligible for Super Saver Shipping Availability: Usually ships in 24 hours
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| Editorial Reviews:
Product Description This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT. Moreover, the book helps you gain a thorough understanding of the subtle optimization issues and design tradeoffs of SiGe HBTs and RF/microwave circuits built with this technology. The book explains how SiGe HBTs offer the high-performance associated with III-V devices such as GaAs and InP, while preserving the low-cost, high-integration level, high yield, and economy-of-scale benefits of conventional silicon IC manufacturing. You discover why SiGe technology offers a unique solution for 21st century communications IC needs.
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| Customer Reviews:
The authoritative book of SiGe HBTs January 19, 2006 1 out of 1 found this review helpful
Definitely not an average beta=Ic/Ib book; it tells you the various factors that go into this equation (and more, of course). The discussion on noise and linearity is in-depth, and more importantly, touches upon circuit-level topics. There is plenty of actual measured data, as well as illustration of practical measurement techniques and sets.
This book is suitable for senior-level undergraduate and graduate students, as well process, device and circuit engineers.
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