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Silicon-Germanium Heterojunction Bipolar Transistors

Silicon-Germanium Heterojunction Bipolar Transistors

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Authors: John D. Cressler, Guofu Niu
Publisher: Artech House Publishers
Category: Book

List Price: $139.00
Buy New: $124.56
You Save: $14.44 (10%)



New (6) from $124.56

Avg. Customer Rating: 5.0 out of 5 stars 1 reviews
Sales Rank: 1118093

Media: Hardcover
Number Of Items: 1
Pages: 589
Shipping Weight (lbs): 2.3
Dimensions (in): 9.2 x 6.2 x 1.6

ISBN: 1580533612
Dewey Decimal Number: 621.381528
EAN: 9781580533614
ASIN: 1580533612

Publication Date: January 2003
Shipping: Eligible for Super Saver Shipping
Availability: Usually ships in 24 hours

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  • Silicon Germanium: Technology, Modeling, and Design
  • Radiation Detection and Measurement

Editorial Reviews:

Product Description
This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.

Moreover, the book helps you gain a thorough understanding of the subtle optimization issues and design tradeoffs of SiGe HBTs and RF/microwave circuits built with this technology. The book explains how SiGe HBTs offer the high-performance associated with III-V devices such as GaAs and InP, while preserving the low-cost, high-integration level, high yield, and economy-of-scale benefits of conventional silicon IC manufacturing. You discover why SiGe technology offers a unique solution for 21st century communications IC needs.


Customer Reviews:

5 out of 5 stars The authoritative book of SiGe HBTs   January 19, 2006
 1 out of 1 found this review helpful

Definitely not an average beta=Ic/Ib book; it tells you the various factors that go into this equation (and more, of course). The discussion on noise and linearity is in-depth, and more importantly, touches upon circuit-level topics. There is plenty of actual measured data, as well as illustration of practical measurement techniques and sets.

This book is suitable for senior-level undergraduate and graduate students, as well process, device and circuit engineers.


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