Operation and Modeling of the MOS Transistor | 
 enlarge | Author: Yannis Tsividis
Publisher: Oxford University Press, USA
Category: Book
List Price: $139.00
Buy New: $62.00
You Save: $77.00 (55%)
New (14) Used (5) from $62.00
Avg. Customer Rating:  7 reviews
Sales Rank: 412262
Media: Hardcover
Edition: 2
Number Of Items: 1
Pages: 640
Shipping Weight (lbs): 2.7
Dimensions (in): 9.8 x 7.6 x 1.5
ISBN: 0195170148
Dewey Decimal Number: 621.3815284
EAN: 9780195170146
ASIN: 0195170148
Publication Date: June 26, 2003
Availability: Usually ships in 1-2 business days
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| Editorial Reviews:
Product Description
Extensively revised and updated, this, the second edition of the highly praised text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips.
KEY FEATURES
Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise.
Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications.
New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them.
Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided.
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| Customer Reviews: Read 2 more reviews...
 Need third edition! April 11, 2008
I bought this book since 1st edition more than 10 years ago for collection.
But for the 2nd edition I bought 7 years ago, I use it as a reference for basic understanding. This is a very detailed textbook about MOSFET. But I still don't know how much different between small-signal model and large-signal model as a lumped circuit elements. Please gives an example of measurement value for recent development of small and large signal model lumped element of MOSFET so that I can design something realistic without HSPICE or SmartSPICE.Some reviewer from NEWCAS-TAISA2008 told me that basic noise model is useless. Does anyone beleive it true or false? So, I will wait for the 3rd edition of this book.
Excellent! Remarkable March 4, 2007
Just reading the Preface to this book, I fell in love with the author. I completely agree that sometimes the most rigorous and careful treatment of a subject actually makes it possible to study the material faster!! What always frustrated me and slowed me down in reading other books was the sloppiness and hand waving. It's amazing that many Ph.Ds and even authors of famous books like Uyemura's "Fundamentals of MOS ICs" don't understand the simple body effect, and talk about complete nonsense showing a 2 terminal capacitor with Vb applied to the bulk, and saying that the Vt will now change by the sqrt(Vb) body effect. They don't understand that the body effect is a 3 terminal effect and in 2 terminals if you apply Vb to bulk then your Vt will have to increase by Vb--NOT sqrt(Vb)!!! This book is a delight. Just the material on contact potentials was worth the money.
This is a repeat of a review I did previously.
Excellent book January 7, 2003
Very good book, very neat and clean description, easy to understand, very informative and technical yet easy to understand.
Just a masterpiece........ October 5, 2001
3 out of 3 found this review helpful
I am a graduate student with main area of interest in Mixed mode design,testing and device modelling.This book was suggested to me by my proffessor.It is the book for MOSFET.I have read many books on this topic like Tyagi,Foty,massobrio etc but this books stands apart.It is a very well written book.Its progress is very logical going from two terminal device to four terminal device with very good explanation of the physics.More importantly the emphasis on the approximations made makes things clearer.....For a person working with Mosfets it is a must......
Excellent addition to your library November 25, 1999
6 out of 6 found this review helpful
I don't usually write reviews unless the book is either very poor or very good. This is one of the best books on my shelf. If you want to know the MOS transistor this is the book. Well researched, excellent explanations, excellent appendices. Other authors of technical books should use this as an example of how to write a good technical book.
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